Field Emission Scanning Electron Microscope with E-Beam Lithography and Reactive Ion Etching

Make: Zeiss, Germany

Model: sigma 300

The Central Research Facility (CRF) has installed FE-SEM Sigma 300 (Carl Zeiss, Germany) with E-Beam Lithography(Elphy Quantum, Raith Nano Fabrication) and Reactive Ion Etching (ION ETCH-150, Hind High Vacuum co.pvt.ltd) for scientific research. Electron Beam Lithography (EBL) of Elphy Quantum Raith Nano Fabrication, is a Nano Fabrication Technique used to Pattern Nano Structures, Nano Lithography. The Technique Consists of Scanning a beam of electrons on the sample coated with resist which is sensitive to electron Beam.

Key Features of EBL

• FESEM: Resolution: 1 nm at 15 KV, 1.6nm at 1 KV
• Magnification: 19994.21KX
• Acceleration voltage: 20V TO 30 KV
• Gun type: Schottky Field Emission Electron Gun
• Maximum Probe Current: 220 pA to 100 nA
• Detectors: SE2 , In-Lens