Field Emission Scanning Electron Microscope with E-Beam Lithography and Reactive Ion Etching


  • Make: Zeiss, Germany
  • Model: sigma 300
  • Faculty-in-Charge: Prof. Mrinal sen
  • Email: lithography_crf@iitism.ac.in
  • Phone: 3262235657

The Central Research Facility (CRF) has installed FE-SEM Sigma 300 (Carl Zeiss, Germany) with E-Beam Lithography(Elphy Quantum, Raith Nano Fabrication) and Reactive Ion Etching (ION ETCH-150, Hind High Vacuum co.pvt.ltd) for scientific research. Electron Beam Lithography (EBL) of Elphy Quantum Raith Nano Fabrication, is a Nano Fabrication Technique used to Pattern Nano Structures,Nano Lithography. The Technique Consists of Scanning a beam of electrons on the sample coated with resist which is sensitive to electron Beam.


The key features of EBL includes:


    FESEM: Resolution: 1 nm at 15 KV, 1.6nm at 1 KV
    Magnification: 19994.21KX
    Acceleration voltage: 20V TO 30 KV
    Gun type: Schottky Field Emission Electron Gun
    Maximum Probe Current: 220 pA to 100 nA
    Detectors: SE2 , In-Lens


Instrument Status : Under Maintenance


Analysis Charge : Click Here